POWER MOSFET, N-CHANNEL, SUPERFE NTH4LN067N65S3H
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Description:
POWER MOSFET, N-CHANNEL, SUPERFE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTH4LN067N65S3H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80398,Price reference "real-time change" China/Hongkong。 NTH4LN067N65S3H package/specs, Download NTH4LN067N65S3H、Datasheet。