TRENCH 40<-<100V PG-TTFN-9 IQE030N06NM5CGATMA1
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Model:
IQE030N06NM5CGATMA1
Description:
TRENCH 40<-<100V PG-TTFN-9
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Surface mount,Wettable wings
DataSheet
IQE030N06NM5CGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59457,Price reference "real-time change" China/Hongkong。 IQE030N06NM5CGATMA1 package/specs, Download IQE030N06NM5CGATMA1、Datasheet。