MOSFET N-CH 30V 18A 8SOIC FDS8672S
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Description:
MOSFET N-CH 30V 18A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS8672S(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71046,Price reference "real-time change" China/Hongkong。 FDS8672S package/specs, Download FDS8672S、Datasheet。