MOSFET N-CH 200V 3.8A TO220-3 FQP4N20L
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Description:
MOSFET N-CH 200V 3.8A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP4N20L(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64074,Price reference "real-time change" China/Hongkong。 FQP4N20L package/specs, Download FQP4N20L、Datasheet。