TPCC8093,L1Q parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TPCC8093,L1Q

Description:

MOSFET N-CH 20V 21A 8TSON

Stock:

46552

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

21A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

2.5V,4.5V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

16 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

1860 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

5.8 mΩ @ 10.5A,4.5V

Power dissipation (maximum)

1.9W(Ta),30W(Tc)

Vgs (max)

±12V

Vgs (th) (maximum) for different Ids

1.2V @ 500µA

packing

series

U-MOSVII

technology

MOSFET(Metal oxide)

working temperature

150°C

Encapsulation/Housing

8-TSON Advance(3.1x3.1)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

TPCC8093,L1Q（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46552,Price reference "real-time change" China/Hongkong。 TPCC8093,L1Q package/specs, Download TPCC8093,L1Q、Datasheet。