MOSFET N-CH 600V 7A DPAK FCD7N60TM-WS
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Description:
MOSFET N-CH 600V 7A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCD7N60TM-WS(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39986,Price reference "real-time change" China/Hongkong。 FCD7N60TM-WS package/specs, Download FCD7N60TM-WS、Datasheet。