POWER MOSFET, 60 V, 2.2 M?, 211 NTBGS002N06C
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Description:
POWER MOSFET, 60 V, 2.2 M?, 211
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTBGS002N06C(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91930,Price reference "real-time change" China/Hongkong。 NTBGS002N06C package/specs, Download NTBGS002N06C、Datasheet。