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    Home/    Category/    MOSFET/    NTBGS002N06C

    POWER MOSFET, 60 V, 2.2 M?, 211 NTBGS002N06C

    NTBGS002N06C image
    The pictures are for reference only
    Brand:
    ON
    Model:
    NTBGS002N06C
    Description:
    POWER MOSFET, 60 V, 2.2 M?, 211
    Stock:
    91930
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    30A(Ta),211A(Tc)
  • Drain source voltage (Vdss)
    60 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V,12V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    62.1 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    4620 pF @ 30 V
  • On resistance (maximum) for different Ids and Vgs
    2.1 mΩ @ 45A,12V
  • Power dissipation (maximum)
    3.7W(Ta),178W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    4V @ 225µA
  • packing
    TR,CT
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    D2PAK(TO-263)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    NTBGS002N06C（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91930,Price reference "real-time change" China/Hongkong。 NTBGS002N06C package/specs, Download NTBGS002N06C、Datasheet。
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