MOSFET P-CH 20V 5.8A SUPERSOT6 FDC608PZ
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Description:
MOSFET P-CH 20V 5.8A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC608PZ(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76038,Price reference "real-time change" China/Hongkong。 FDC608PZ package/specs, Download FDC608PZ、Datasheet。