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    Home/    Category/    MOSFET/    FQD6N25TM

    MOSFET N-CH 250V 4.4A DPAK FQD6N25TM

    FQD6N25TM image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FQD6N25TM
    Description:
    MOSFET N-CH 250V 4.4A DPAK
    Stock:
    8649
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：13794459602(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    4.4A(Tc)
  • Drain source voltage (Vdss)
    250 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    8.5 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    300 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    1 Ω @ 2.2A,10V
  • Power dissipation (maximum)
    2.5W(Ta),45W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    5V @ 250µA
  • packing
    TR,CT
  • series
    QFET®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-252AA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    FQD6N25TM（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8649,Price reference "real-time change" China/Hongkong。 FQD6N25TM package/specs, Download FQD6N25TM、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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