MOSFET N-CH 800V 10A TO220SIS TK10A80E,S4X
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Description:
MOSFET N-CH 800V 10A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK10A80E,S4X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99184,Price reference "real-time change" China/Hongkong。 TK10A80E,S4X package/specs, Download TK10A80E,S4X、Datasheet。