MOSFET N-CH 60V 32A D2PAK FQB30N06LTM
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Description:
MOSFET N-CH 60V 32A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB30N06LTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42744,Price reference "real-time change" China/Hongkong。 FQB30N06LTM package/specs, Download FQB30N06LTM、Datasheet。