MOSFET N-CH 200V 7.6A IPAK FQU10N20TU
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Description:
MOSFET N-CH 200V 7.6A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQU10N20TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7713,Price reference "real-time change" China/Hongkong。 FQU10N20TU package/specs, Download FQU10N20TU、Datasheet。