MOSFET N-CH 500V 11.5A D2PAK FDB12N50FTM-WS
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Description:
MOSFET N-CH 500V 11.5A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDB12N50FTM-WS(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4491,Price reference "real-time change" China/Hongkong。 FDB12N50FTM-WS package/specs, Download FDB12N50FTM-WS、Datasheet。