MOSFET N-CH 60V 1.7A SUPERSOT3 FDN5630
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Description:
MOSFET N-CH 60V 1.7A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN5630(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41908,Price reference "real-time change" China/Hongkong。 FDN5630 package/specs, Download FDN5630、Datasheet。