MOSFET P-CH 250V 4A D2PAK FQB4P25TM
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Description:
MOSFET P-CH 250V 4A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB4P25TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78884,Price reference "real-time change" China/Hongkong。 FQB4P25TM package/specs, Download FQB4P25TM、Datasheet。