MOSFET P-CH 30V 8.8A 8SOIC FDS4435BZ
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Description:
MOSFET P-CH 30V 8.8A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS4435BZ(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59289,Price reference "real-time change" China/Hongkong。 FDS4435BZ package/specs, Download FDS4435BZ、Datasheet。