MOSFET N-CH 600V 200MA SOT223-4 FQT1N60CTF-WS
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Description:
MOSFET N-CH 600V 200MA SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQT1N60CTF-WS(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50242,Price reference "real-time change" China/Hongkong。 FQT1N60CTF-WS package/specs, Download FQT1N60CTF-WS、Datasheet。