MOSFET N-CH 100V 120A TO263-3 IPB033N10N5LFATMA1
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Description:
MOSFET N-CH 100V 120A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB033N10N5LFATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92705,Price reference "real-time change" China/Hongkong。 IPB033N10N5LFATMA1 package/specs, Download IPB033N10N5LFATMA1、Datasheet。