MOSFET P-CH 60V 35A ATPAK ATP113-TL-H
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Description:
MOSFET P-CH 60V 35A ATPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ATP113-TL-H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99592,Price reference "real-time change" China/Hongkong。 ATP113-TL-H package/specs, Download ATP113-TL-H、Datasheet。