MOSFET P-CH 30V 15.2A/28A 8PQFN FDMS6673BZ
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Description:
MOSFET P-CH 30V 15.2A/28A 8PQFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDMS6673BZ(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90039,Price reference "real-time change" China/Hongkong。 FDMS6673BZ package/specs, Download FDMS6673BZ、Datasheet。