MOSFET P-CH 20V 2.3A 6WDFN NTLJF3117PT1G
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Description:
MOSFET P-CH 20V 2.3A 6WDFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTLJF3117PT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2114,Price reference "real-time change" China/Hongkong。 NTLJF3117PT1G package/specs, Download NTLJF3117PT1G、Datasheet。