MOSFET N-CH 650V 10A DPAK FCD360N65S3R0
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Description:
MOSFET N-CH 650V 10A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCD360N65S3R0(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26267,Price reference "real-time change" China/Hongkong。 FCD360N65S3R0 package/specs, Download FCD360N65S3R0、Datasheet。