MOSFET N-CH 60V 2.6A SUPERSOT3 FDN86501LZ
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Description:
MOSFET N-CH 60V 2.6A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN86501LZ(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5933,Price reference "real-time change" China/Hongkong。 FDN86501LZ package/specs, Download FDN86501LZ、Datasheet。