MOSFET N-CH 200V 21A D2PAK FQB19N20LTM
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Description:
MOSFET N-CH 200V 21A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB19N20LTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29686,Price reference "real-time change" China/Hongkong。 FQB19N20LTM package/specs, Download FQB19N20LTM、Datasheet。