MOSFET N-CH IPS70R2K0CEE8211
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPS70R2K0CEE8211(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73405,Price reference "real-time change" China/Hongkong。 IPS70R2K0CEE8211 package/specs, Download IPS70R2K0CEE8211、Datasheet。