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    Home/    Category/    MOSFET/    FQP22N30

    MOSFET N-CH 300V 21A TO220-3 FQP22N30

    FQP22N30 image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FQP22N30
    Description:
    MOSFET N-CH 300V 21A TO220-3
    Stock:
    69668
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：13794459602(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    21A(Tc)
  • Drain source voltage (Vdss)
    300 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    60 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    2200 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    160 mΩ @ 10.5A,10V
  • Power dissipation (maximum)
    170W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    5V @ 250µA
  • packing
    bulk,pipe
  • series
    QFET®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-220-3
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    On sale
    • PDFicoDataSheet
    FQP22N30（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory69668,Price reference "real-time change" China/Hongkong。 FQP22N30 package/specs, Download FQP22N30、Datasheet。
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    ICQQG images/产品内页BANNER英文.jpg
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