MOSFET P-CH 60V 5.7A 8WDFN NTTFS5116PLTWG
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Description:
MOSFET P-CH 60V 5.7A 8WDFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTTFS5116PLTWG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory61847,Price reference "real-time change" China/Hongkong。 NTTFS5116PLTWG package/specs, Download NTTFS5116PLTWG、Datasheet。