NVMFS5C612NWFT1G parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ NVMFS5C612NWFT1G

The pictures are for reference only

Brand:

Model:

NVMFS5C612NWFT1G

Description:

MOSFET N-CH 60V 34A/225A 5DFN

Stock:

44644

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

34A(Ta),225A(Tc)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

62 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

4900 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

1.65 mΩ @ 50A,10V

Power dissipation (maximum)

3.8W(Ta),167W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

TR,CT

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

5-DFN(5x6)(8-SOFL)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NVMFS5C612NWFT1G.pdf

NVMFS5C612NWFT1G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44644,Price reference "real-time change" China/Hongkong。 NVMFS5C612NWFT1G package/specs, Download NVMFS5C612NWFT1G、Datasheet。