MOSFET N-CH 800V 8A TO220F FCPF650N80Z
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Description:
MOSFET N-CH 800V 8A TO220F
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCPF650N80Z(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory54918,Price reference "real-time change" China/Hongkong。 FCPF650N80Z package/specs, Download FCPF650N80Z、Datasheet。