MOSFET - POWER, SINGLE, N-CHANNE NTBLS1D7N08H
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Description:
MOSFET - POWER, SINGLE, N-CHANNE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTBLS1D7N08H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46361,Price reference "real-time change" China/Hongkong。 NTBLS1D7N08H package/specs, Download NTBLS1D7N08H、Datasheet。