T6 40V LL PQFN8*8 EXPANSI NVMTS0D6N04CLTXG
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Description:
T6 40V LL PQFN8*8 EXPANSI
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVMTS0D6N04CLTXG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory45722,Price reference "real-time change" China/Hongkong。 NVMTS0D6N04CLTXG package/specs, Download NVMTS0D6N04CLTXG、Datasheet。