NVTFS070N10MCLTAG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NVTFS070N10MCLTAG

Description:

PTNG 100V LL U8FL

Stock:

25467

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

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Parameters

Current at 25 ° C - continuous drain (Id)

4.5A(Ta),13A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

5.5 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

305 pF @ 50 V

On resistance (maximum) for different Ids and Vgs

65 mΩ @ 3A,10V

Power dissipation (maximum)

2.9W (Ta), 25W (Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3V @ 15µA

packing

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-WDFN(3.3x3.3)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NVTFS070N10MCLTAG.pdf

NVTFS070N10MCLTAG（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25467,Price reference "real-time change" China/Hongkong。 NVTFS070N10MCLTAG package/specs, Download NVTFS070N10MCLTAG、Datasheet。