PTNG 100V LOW Q 12MOHM N-FET, U8 NTTFS012N10MDTAG
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Description:
PTNG 100V LOW Q 12MOHM N-FET, U8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTTFS012N10MDTAG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4778,Price reference "real-time change" China/Hongkong。 NTTFS012N10MDTAG package/specs, Download NTTFS012N10MDTAG、Datasheet。