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MOSFET N-CH 200V 18A TO220F FDPF18N20FT-G

FDPF18N20FT-G image
The pictures are for reference only
Brand:
Model:
FDPF18N20FT-G
Description:
MOSFET N-CH 200V 18A TO220F
Stock:
49597
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    18A(Tc)
  • Drain source voltage (Vdss)
    200 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    26 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1180 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    140 mΩ @ 9A,10V
  • Power dissipation (maximum)
    35W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    5V @ 250µA
  • packing
    pipe
  • series
    UniFET™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-220F-3
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    On sale
  • PDFicoDataSheet
    FDPF18N20FT-G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49597,Price reference "real-time change" China/Hongkong。 FDPF18N20FT-G package/specs, Download FDPF18N20FT-G、Datasheet。
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