FDPF18N20FT-G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

FDPF18N20FT-G

Description:

MOSFET N-CH 200V 18A TO220F

Stock:

49597

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

18A(Tc)

Drain source voltage (Vdss)

200 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

26 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1180 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

140 mΩ @ 9A,10V

Power dissipation (maximum)

35W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

5V @ 250µA

packing

pipe

series

UniFET™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220F-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载FDPF18N20FT-G.pdf

FDPF18N20FT-G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49597,Price reference "real-time change" China/Hongkong。 FDPF18N20FT-G package/specs, Download FDPF18N20FT-G、Datasheet。