FET -100V 22.0 MOHM PQFN56 FDMS86163P-23507X
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Description:
FET -100V 22.0 MOHM PQFN56
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDMS86163P-23507X(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22860,Price reference "real-time change" China/Hongkong。 FDMS86163P-23507X package/specs, Download FDMS86163P-23507X、Datasheet。