NTMFS4H02NT3G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NTMFS4H02NT3G

Description:

MOSFET N-CH 25V 37A/193A 5DFN

Stock:

82039

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：13794459602(Wechat)

Q Q：3469113929

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Parameters

Current at 25 ° C - continuous drain (Id)

37A(Ta),193A(Tc)

Drain source voltage (Vdss)

25 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

38.5 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2651 pF @ 12 V

On resistance (maximum) for different Ids and Vgs

1.4 mΩ @ 30A,10V

Power dissipation (maximum)

3.13W(Ta),83W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.1V @ 250µA

packing

series

technology

MOSFET(Metal oxide)

working temperature

150°C(TJ)

Encapsulation/Housing

5-DFN(5x6)(8-SOFL)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

Final sale

DataSheet

下载NTMFS4H02NT3G.pdf

NTMFS4H02NT3G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory82039,Price reference "real-time change" China/Hongkong。 NTMFS4H02NT3G package/specs, Download NTMFS4H02NT3G、Datasheet。