MOSFET N-CH 500V 18.5A TO220-3 IPP50R190CEXKSA1
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Description:
MOSFET N-CH 500V 18.5A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPP50R190CEXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90905,Price reference "real-time change" China/Hongkong。 IPP50R190CEXKSA1 package/specs, Download IPP50R190CEXKSA1、Datasheet。