MOSFET N-CH 600V TO-3PN FCA16N60N
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Description:
MOSFET N-CH 600V TO-3PN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCA16N60N(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26312,Price reference "real-time change" China/Hongkong。 FCA16N60N package/specs, Download FCA16N60N、Datasheet。