MOSFET N-CH 100V 200A TO263-7 FDB0260N1007L
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Description:
MOSFET N-CH 100V 200A TO263-7
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDB0260N1007L(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60763,Price reference "real-time change" China/Hongkong。 FDB0260N1007L package/specs, Download FDB0260N1007L、Datasheet。