TRANSISTOR N-CH SIPC10S2N06LX2LA1
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Description:
TRANSISTOR N-CH
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SIPC10S2N06LX2LA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20779,Price reference "real-time change" China/Hongkong。 SIPC10S2N06LX2LA1 package/specs, Download SIPC10S2N06LX2LA1、Datasheet。