NVBG045N065SC1 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ NVBG045N065SC1

The pictures are for reference only

Brand:

Model:

NVBG045N065SC1

Description:

SIC MOS D2PAK-7L 650V

Stock:

1246

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

62A(Tc)

Drain source voltage (Vdss)

650 V

Drive voltage (maximum RdsOn, minimum RdsOn)

15V,18V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

105 nC @ 18 V

Input capacitance at different Vds (Ciss) (maximum)

1890 pF @ 325 V

On resistance (maximum) for different Ids and Vgs

50 mΩ @ 25A,18V

Power dissipation (maximum)

242W(Tc)

Vgs (max)

+22V,-8V

Vgs (th) (maximum) for different Ids

4.3V @ 8mA

packing

series

Automotive, AEC-Q101

technology

SiC(Silicon carbide bonded crystal tube)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

D2PAK-7

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NVBG045N065SC1.pdf

NVBG045N065SC1（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1246,Price reference "real-time change" China/Hongkong。 NVBG045N065SC1 package/specs, Download NVBG045N065SC1、Datasheet。