MOSFET P-CH 100V 6A DPAK MTD6P10E
The pictures are for reference only
Description:
MOSFET P-CH 100V 6A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
MTD6P10E(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77059,Price reference "real-time change" China/Hongkong。 MTD6P10E package/specs, Download MTD6P10E、Datasheet。