MOSFET N-CH 200V 6A DPAK MTD6N20ET4
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Description:
MOSFET N-CH 200V 6A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
MTD6N20ET4(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72368,Price reference "real-time change" China/Hongkong。 MTD6N20ET4 package/specs, Download MTD6N20ET4、Datasheet。