IPP65R095C7XKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPP65R095C7XKSA1

Description:

MOSFET N-CH 650V 24A TO220-3

Stock:

26116

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$1.35

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Parameters

Current at 25 ° C - continuous drain (Id)

24A(Tc)

Drain source voltage (Vdss)

650 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

45 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2140 pF @ 400 V

On resistance (maximum) for different Ids and Vgs

95 mΩ @ 11.8A,10V

Power dissipation (maximum)

128W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 590µA

packing

pipe

series

CoolMOS™ C7

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TO220-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载IPP65R095C7XKSA1.pdf

IPP65R095C7XKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26116,Price reference "real-time change" China/Hongkong。 IPP65R095C7XKSA1 package/specs, Download IPP65R095C7XKSA1、Datasheet。