MOSFET N-CH 20V 3.3A 8SOIC NTMS4N01R2G
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Description:
MOSFET N-CH 20V 3.3A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMS4N01R2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33680,Price reference "real-time change" China/Hongkong。 NTMS4N01R2G package/specs, Download NTMS4N01R2G、Datasheet。