MOSFET P-CH 20V 2.34A 8SOIC NTMSD3P102R2G
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Description:
MOSFET P-CH 20V 2.34A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMSD3P102R2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19550,Price reference "real-time change" China/Hongkong。 NTMSD3P102R2G package/specs, Download NTMSD3P102R2G、Datasheet。