NTTFS4823NTAG parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ NTTFS4823NTAG

The pictures are for reference only

Brand:

Model:

NTTFS4823NTAG

Description:

MOSFET N-CH 30V 7.1A/50A 8WDFN

Stock:

98971

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

7.1A(Ta),50A(Tc)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,11.5V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

9 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

1013 pF @ 12 V

On resistance (maximum) for different Ids and Vgs

10.5 mΩ @ 20A,10V

Power dissipation (maximum)

660mW(Ta),32.9W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.5V @ 250µA

packing

TR,bulk

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-WDFN(3.3x3.3)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载NTTFS4823NTAG.pdf

NTTFS4823NTAG（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98971,Price reference "real-time change" China/Hongkong。 NTTFS4823NTAG package/specs, Download NTTFS4823NTAG、Datasheet。