MOSFET N-CH 30V 6A 8SOIC NTMSD6N303R2G
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Description:
MOSFET N-CH 30V 6A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMSD6N303R2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62986,Price reference "real-time change" China/Hongkong。 NTMSD6N303R2G package/specs, Download NTMSD6N303R2G、Datasheet。