MOSFET N-CH 80V 9A 8SOIC FDS3570
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Description:
MOSFET N-CH 80V 9A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS3570(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25227,Price reference "real-time change" China/Hongkong。 FDS3570 package/specs, Download FDS3570、Datasheet。