MOSFET P-CH 30V 11A 8SOIC FDS6675A
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Description:
MOSFET P-CH 30V 11A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS6675A(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12684,Price reference "real-time change" China/Hongkong。 FDS6675A package/specs, Download FDS6675A、Datasheet。